IMPATT Diode Calculator & Formula

IMPATT diodes are high frequency semiconductor devices that generate microwave power using avalanche breakdown and transit time effects. They are widely used in high power RF sources. This page provides Impatt diode calculator and its formula used to calculate resonant frequency and CW output power.

EXAMPLE:

INPUTS:

• Drift Region Length (μm) = 6
• Saturated Carrier Drift Velocity, Vd = 2.0E5 m/s
• Operating Voltage = 100 V
• Operating Current = 0.2 A
• Efficiency = 0.15

OUTPUTS:

• Resonant Frequency = 16.7 GHz
• CW Output Power = 3 Watt

Impatt Diode Formula

Summary: The impatt diode performs calculations based on avalanche transit time principles. This tool helps in understanding high frequency oscillation mechanisms and power generation capabilities of IMPATT devices, which are widely used in high power microwave sources. By combining theory with practical computation, it serves as a valuable educational and design aid for microwave engineers and researchers working on high frequency semiconductor oscillators.

References for further study

1. Microwave Devices and Circuits By S. Y. Liao
2. Physics of Semiconductor Devices By S. M. Sze & Kwok Ng
3. IEEE Microwave Theory and Techniques Society (MTT-S) papers ; Research papers on IMPATT diode modeling and high-frequency power generation.