App-Notes » V-Band GaN Power Amplifiers for Satcom | TMC315 mmTron

V-Band GaN Power Amplifiers for Satcom | TMC315 mmTron

Published on February 22, 2026

v band gan power amplifier power amplifier satellite amplifier mmtron tmc315

Introduction : As global demand for data scales toward terabit per second capacities, traditional satellite frequency bands like Ku and Ka are becoming increasingly congested. To accommodate the massive bandwidth requirements of mega constellations in Low Earth Orbit (LEO) and Very Low Earth Orbit (VLEO), the industry is migrating toward the V-band (typically 37.5 to 52.4 GHz).

Operating at these higher frequencies allows for narrower beamwidths and smaller antenna hardware, but it introduces significant challenges in terms of signal atmospheric loss and hardware efficiency.

Why GaN for Power Amplifiers?

Gallium Nitride (GaN) has emerged as the semiconductor material of choice for V-band Power Amplifiers (PAs). Compared to traditional Gallium Arsenide (GaAs), GaN offers following benefits.

  • Higher Power Density: Enables smaller, lighter components for reduced launch mass.
  • Thermal Robustness: Better heat dissipation capabilities, critical for the vacuum of space.
  • High Efficiency: Lower power consumption preserves the satellite’s limited energy budget.

Product Spotlight : mmTron TMC315

The TMC315 from mmTron is a high linearity PA designed specifically for the V-band satellite downlink (37 to 44 GHz). It is fabricated on a space qualified GaN on SiC process, combining power performance with long term reliability.

Key Specifications

  • Output Power: Provides 39 dBm (approx. 8W) at 1 dB compression and 40 dBm (10W) at saturation.
  • Efficiency: Achieves a Power Added Efficiency (PAE) of 25 %, which is essential for managing the thermal envelope of a satellite payload.
  • Linearity: Demonstrates superior linearity with a Third-Order Intermodulation (IMD3) better than -33 dBc at 31 dBm output.
  • Packaging : To ensure mechanical reliability, mmTron offers the TMC315 in bare die or packaged in air cavity 5x5 QFNs.

Modern satellite protocols use high order modulation (such as 256-QAM or 1024-QAM) to maximize spectral efficiency. These signals are highly sensitive to distortion. The TMC315’s high linearity allows for lower Error Vector Magnitude (EVM), ensuring that the data transmitted from orbit remains crisp and error free when it reaches the ground gateway.

Reference: For more information, Visit mmtron website

Comparative Guide : Other V band GaN power amplifiers

ManufacturerProduct with features
QorVoOffers a wide range of space-qualified GaN-on-SiC PAs and front-end modules covering Ka through V-band.
WolfspeedA leader in GaN-on-SiC technology, providing high-power MMICs for military and commercial satellite communications.
NxbeamKnown for specialized power amplifier MMICs optimized for linear power applications in Ku, Ka, and V-bands.
Analog DevicesProvides integrated V-band up/down converters and driver amplifiers for mmWave backhaul and Satcom.
Northrop GrummanProduces high end, custom GaN MMICs for high reliability aerospace and defense V-band systems.

Summary

The transition to V-band is a prerequisite for the future of global broadband. Components like the mmTron TMC315 represent a critical link in this chain, providing the power and linearity necessary for harsh environment of space. When selecting a V-band PA, engineers must balance output power with thermal management and linearity to ensure the success of the mission.