Microwave Transistor vs TED-difference between microwave transistor and TED(Transfer Electronic Device)
This page covers difference between microwave transistor and TED(Transfer Electronic Device). They are basically microwave solid state devices.
• The Microwave transistor devices include microwave BJT, FET, HBT, tunnel diode etc.
Here electrons and holes both participate in the transport process.
• It consists of junctions or gates.
• It is fabricated from elemental semiconductor such as Ge and Si.
• It operates with low energy "Warm" electrons.
• Applications:S and L band RF transmitters, L and S band high speed switching devices, microwave amplification and oscillations, memory and switching devices
• Advantages:Low cost, low power supply, small size
TED (Transfer Electronic Device)
• The TED devices include Gunn diode, LSA diode and Inp diode.
Here electron transfer from lower conduction valley to the upper satellite valley.
• It is not having any junction or gate, it is a bulk type of device.
• It is fabricated from compound semiconductor such as GaAS and Inp.
• It operates with high energy "hot" electrons.
• Applications:L,S,C,X band amplifier and oscillators, RF transmitter, Radar systems
• Advantages:Low noise, high gain, low power, reliable, lighter in weight
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