Difference between NAND Flash and NOR Flash Memory
This page compares NAND Flash vs NOR Flash Memory and mentions difference between NAND Flash and NOR Flash Memory architectures.
NAND Flash Memory Architecture
Image courtesy : Cypress Semiconductor Corporation (Now part of Infineon Technologies)
The figure-2 depicts architecture of NAND flash memory.
As shown, several memory cells (about eight) are connected in series.
This resembles NAND gate.
Advantages : It offers much small cell size. It offers high write speed and erase speed.
Disadvantages : It offers slow read speed. It does not allow random access.
NOR Flash Memory Architecture
Image courtesy : Cypress Semiconductor Corporation (Now part of Infineon Technologies)
The figure-2 depicts architecture of NOR flash memory.
As shown, one end of cell is interfaced to source line and other end to
bit line. This resembles NOR gate.
Advantages : It offers enough address lines useful to map complete memory range.
It provides faster random read speed.
Disadvantages : It offers higher cost per bit, slower write speed
and slower erase speed.
Difference between NAND Flash and NOR Flash Memory
Following table mentions difference between NAND Flash and NOR Flash memory types.
| Features | NAND Flash | NOR Flash |
|---|---|---|
| • Capacity | Higher | Lower |
| • Cost per bit | Lower | Higher |
| • Random read speed | Slow | Fast |
| • Write speed | Fast | Slow |
| • Erase speed | Fast | Slow |
| • Power on current | Lower | Higher |
| • Standby current | Higher | Lower |
| • Bit flipping | More common | Less common |
| • Data retention | Low (~10 years) | Very high (~20 years for 1K program erase cycles) |
| • Application | Data storage | Code storage and execution |
| • Example | S34ML04G2 (Cypress Semiconductor Corp. which is now part of Infineon) | S70GL02GT (Cypress Semiconductor is now part of Infineon) |
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