Difference between Microwave semiconductor material-Si,GaAs,InP,GaN,AIN,InN
This page on Microwave semiconductor material compares properties of Si, GaAs, InP, GaN, AIN and InN. This tabular difference between Si,GaAs,InP,GaN,AIN and InN microwave semiconductor material is very useful.
Following table mentions major microwave semiconductor material properties of binary III-nitride compound. These are measured at temperature of 300K.
| Material Properties | GaAs | Si | InP | GaN | AIN | InN |
|---|---|---|---|---|---|---|
| Structure | Zinc Blende | Diamond Cubic | Zinc Blende | Wurtzite | Wurtzite | Wurtzite |
| Lattice constant | 5.653 | 5.431 | 5.869 | a=3.18 c =5.18 |
a=3.11 c =4.97 |
a=3.54 c =5.71 |
| Band Gap (eV) | 1.42 | 1.12 | 1.35 | 3.44 | 6.2 | 0.7 to 1.0 |
| Nature of bandgap | direct | indirect | direct | direct | direct | direct |
| refractive index | 3.3 | 3.42 | 3.1 | 2.3 | 2.1 to 2.2 | 2.9 to 3.0 |
| dielectric constant | 12.9 | 11.7 | 12.6 | 10.4 | 8.5 | 15.3 |
| Thermal conductivity ( W/cm-1 L-1 ) |
0.46 | 1.56 | 0.68 | 2.0 to 2.4 | 3.0 to 3.3 | 0.6 to 1.0 |
| Electron Mobility (cm2/V-s) |
8000 | 1400 | 5400 | 2000 | 300 | 3200 |
| Hole Mobility (cm2/V-s) |
400 | 500 | 200 | 400 | 14 | - |
| Electron saturated velocity (107 cm/s) |
0.7 | 2.3 | 3.9 | 2.5 | 1.9 | 3.4 |
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