Memristor vs. Transistor: Understanding Key Differences
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This article explores the differences between memristors and transistors, two fundamental components in modern electronics. Let’s dive in.
Transistor Basics
A transistor is a three-terminal active device that serves as either an amplifier or a switch. There are two main types:
- Bipolar Junction Transistors (BJTs): These have emitter, base, and collector terminals.
 - Field-Effect Transistors (FETs): These have gate, source, and drain terminals.
 
Transistors are widely used in countless electrical and electronic circuits.
Memristor Basics
A memristor is a two-terminal passive component. It essentially relates electric charge and magnetic flux within an electronic circuit. Applications include:
- Analog circuits
 - Digital circuits
 - Memory chips
 - Neural networks
 - Logic circuits
 
Memristors are typically fabricated using either:
- Molecular & Ionic thin film techniques
 - Spin-based methods
 
Memristor vs. Transistor: A Detailed Comparison
The following table highlights the key differences between memristors and transistors:
| Parameters | Memristor | Transistor | 
|---|---|---|
| Functionality | Composed of memory and resistor functionalities. It can control current and remembers charge flowed through it. | Based on transistor types, it can control current (using BJT type) or voltage (using FET type). | 
| Symbol | ![]()  | ![]()  | 
| Type of device | Passive | Active | 
| State retention | It retains state in the form of resistance. | It retains state in the form of electric charge. | 
| Bias requirement | It does not require a power source to retain data state. | It requires a bias voltage source to retain data state. | 
| Number of terminals | Two | Three (Source, Gate, and Drain) | 
| Scalability | It is scalable by reducing the thickness of memristor materials. | It is scalable by reducing lateral length and width dimensions between the input and output electrodes. | 
| Capability | It is capable of performing analog or digital electronic functionalities based on materials used. | It is capable of performing analog or digital electronic functionalities based on applied bias voltages. | 
| Fabrication | Fabricated using optical lithography, with alternative mass production techniques implemented. | Fabricated using optical lithography. | 
| Switching speed | nsec range | µs range | 
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