Wolfspeed | Silicon Carbide Power & GaN on SiC RF Solutions
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Wolfspeed, Inc. is a global leader in silicon carbide (SiC) semiconductor technology and one of the pioneers driving the industry’s transition from conventional silicon to wide bandgap semiconductor solutions. Headquartered in Durham, North Carolina, USA, Wolfspeed specializes in the development and manufacture of SiC materials, power semiconductors, RF materials, and power modules for electric vehicles, renewable energy, AI data centers, industrial automation, aerospace, defense, and high performance power conversion systems.
Unlike traditional RF component manufacturers, Wolfspeed’s primary focus is on power electronics and semiconductor materials. However, the company also plays an important role in the RF and microwave industry through its semi insulating silicon carbide (SiC) substrates and GaN-on-SiC epitaxial materials, which are widely used in high frequency RF power amplifiers for 5G base stations, radar, satellite communications, and aerospace & defense applications.
Key Product Highlights & Selection Guide
The key products are GaN HEMT (High Electron Mobility Transistor) devices, RF MMICs and SiC power modules.
| Product Category | Typical Selection Parameters / Specifications |
|---|---|
| SiC Power MOSFETs | Voltage rating (650 V–10 kV), RDS(on), continuous drain current, package type, junction temperature |
| SiC Schottky Diodes | Reverse voltage, forward current, recovery characteristics, package |
| SiC Power Modules | Voltage, current rating, half bridge/full bridge topology, thermal performance |
| Bare Die SiC MOSFETs | Voltage class, die size, current capability, thermal resistance |
| Bare Die SiC Diodes | Reverse voltage, forward current, surge capability |
| WolfPACK Power Modules | Module configuration, switching performance, cooling method, output current |
| Gate Driver Evaluation Boards | Device compatibility, switching frequency, evaluation capability |
| Evaluation Kits | Supported MOSFET/module family, application reference design |
| Conductive SiC Substrates | Wafer diameter (150 mm/200 mm), resistivity, crystal quality |
| GaN-on-SiC RF Materials | Semi-insulating substrate, epitaxial structure, wafer diameter |
For RF applications, select Wolfspeed’s GaN-on-SiC amplifiers based on your operating frequency band (e.g., S-Band, X-Band) and pulsed vs. continuous wave power needs. For EV or industrial power, select SiC modules based on breakdown voltage (e.g., 650V, 1200V) and current capacity.
Why Choose Wolfspeed Company?
- Wolfspeed’s GaN-on-SiC technology offers vastly superior thermal conductivity compared to standard silicon or GaAs. This allows devices to run cooler, handle massive amounts of power, and operate efficiently at higher frequencies which are critical for modern radar, aerospace, and electric vehicle architectures.
- Fully integrated manufacturing including SiC crystal growth, wafers, epitaxy, device fabrication, and power modules.
- Advanced 200 mm SiC wafer production supporting high volume automotive and industrial markets.
- Products designed for electric vehicles, renewable energy, AI data centers, aerospace, industrial automation, and power infrastructure.
- Industry leading portfolio of SiC MOSFETs, Schottky diodes, power modules, and semiconductor materials.
Latest Products
| Product introduced | Description |
|---|---|
| Gen 5 1200 V Automotive SiC MOSFETs | offers significantly improved efficiency and lower on-resistance for electric vehicle traction inverters |
| 750 V Silicon Carbide MOSFET Family | offers topside cooled packages, optimized for industrial power supplies, EV charging systems, and energy storage. |
| 10 kV SiC Power MOSFET | enables grid modernization, medium voltage converters, and AI data center infrastructure. |
| 3.3 kV WolfPACK® SiC Power Modules | designed for renewable energy, medium-voltage drives, and utility scale power conversion |
| Next-Generation TOLT (Top Side Cooled) SiC MOSFET Portfolio | improves thermal performance and power density for AI data center power supplies. |
Latest News
- June 9, 2026 : Wolfspeed Unveils the Industry’s Lowest RDS(ON) Silicon Carbide (SiC) MOSFETs in New Technology Generation
- Mar 05, 2026 : Introduces industry’s first commercially available 10 kV SiC power MOSFET.
Summary
Wolfspeed, Inc. is a global technology leader in silicon carbide power semiconductors and advanced SiC materials, enabling the next generation of energy efficient power conversion systems. Through continuous innovation in wide bandgap semiconductor technology, vertically integrated manufacturing, and advanced material science, Wolfspeed continues to play a pivotal role in the global transition toward more efficient, compact, and sustainable electronic systems.
Address & Contact Details
- Address : 4600 Silicon Drive, Durham, North Carolina, 27703, USA
- Phone : +1 919-313-5300
- Contact Form : Sign Up for Emails