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Gunn diode Oscillator Application note | Gunn diode diagram

This Gunn diode oscillator application note covers basic description of Gunn diode Oscillator along with gunn diode diagram and its circuit.

This type of diode is widely used at high frequency electronic circuits. It is also known as transferred electron device or TED. Unlike other diodes which usually will have both N and P doped regions, Gunn diode has only N-type of semiconductor doping material.

As shown in the figure-1 below, Gunn diode is made of 3 regions out of which two are heavily doped(N+) and one is lightly doped(N-). Upon application of voltage across the Gunn diode, large electrical gradient will develop acoss middle layer (N-) of the device. But at high potential, middle layer conductive properties can be altered and hence will reduce the gradient across the device. This will prevent the conduction slowly after current will get reduced. Refer GUNN diode basics and applications.

Gunn diode Oscillator Circuit | Gunn diode Diagram

Gunn diode oscillator

Figure depicts Gunn diode layers, transfer characteristics and Gunn diode oscillator circuit. Gunn diode diagram depicts negative resistance region.

This negative resistance along with lead inductance and some stray capacitance result into oscillations. This relaxation type of oscillation in most of the cases will have large amplitude which will burn out the diode. Large capacitor is connected across the Gunn diode which will help avoid and minimize this failure.

This feature is used to build oscillators at higher frequencies in GHz and THz bands. Here resonator is added in order to control the frequency.

Semiconductor diodes related links

GUNN diode basics and applications
Varactor diode basics and applications
PIN diode basics and applications
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Schottky diode basics and applications
Microwave semiconductor devices

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