Terminology » Components » VMOS vs UMOS: Understanding the Key Differences

VMOS vs UMOS: Understanding the Key Differences

vmos umos mosfet transistor semiconductor

VMOS stands for V-groove MOSFET and UMOS stands for U-groove or Trench MOSFET. They are both vertical structure power MOSFETs. They are designed to handle high current and voltage levels efficiently. Both are designed to handle high power capabilities. They differ in their structure design and performance.

VMOS Basics

As shown in the figure-1, it has V-shaped groove. It is etched into silicon substrate to form gate region. This groove facilitates current from source to drain. Hence it offers larger channel area and higher current capacity.

VMOS structure

Figure 1 depicts the VMOS structure.

UMOS Basics

As shown in the figure-2, it incorporates U-shaped trench etched into silicon. Gate electrodes are placed within this trench. It also allows vertical current flow like VMOS including improvement in electric field distribution.

UMOS structure

Figure 2 depicts the UMOS structure.

Differences between VMOS and UMOS

Feature	VMOS	UMOS
Gate Structure	V-shaped groove	U-shaped groove
ON-resistance	Moderate	Lower
Current handling	High	Higher
Device density	Lower	Higher
Breakdown voltage	Lower	Higher
Reliability	Prone to degradation	Enhanced longevity
Fabrication	Simple	Complex

Conclusion

UMOS devices offer superior performance in terms of reliability, efficiency and scalability. Hence UMOS technology has become more prevalent in modern electronics.