What is Tunnel Diode : Top Manufacturers

A tunnel diode is a heavily doped semiconductor device that exhibits negative resistance due to quantum mechanical tunneling effects. Tunnel diodes are used in high-frequency oscillators, microwave circuits, switching applications, signal generation systems, and specialized RF electronics requiring extremely fast response characteristics.

Tunnel diodes are indispensable components in a variety of high frequency applications, including microwave systems and radar technology. With the ever growing demand for faster and more efficient electronics, tunnel diode manufacturers are concentrating on delivering components that provide outstanding performance even in challenging environments. The popular manufacturers include M-Pulse Microwave, MACOM, American Microsemiconductor, Texas Instruments, and General Electric.

Tunnel Diode Working

A tunnel diode is a type of semiconductor diode that exhibits negative resistance due to a quantum mechanical effect known as the tunneling effect.

Figure 1: Tunnel Diode Equivalent Circuit

Figure 2: Tunnel Diode Characteristic and Symbol

As shown in Figure 2, the current decreases as the voltage increases within a specific region. This results in the characteristic negative resistance curve.

Tunnel diodes find use in various applications such as oscillators, amplifiers, and one-shot multivibrators. The following specifications and parameters are typically considered when selecting a tunnel diode:

• Peak current (maximum) in the tunneling (negative resistance) region.
• Valley current (minimum) in the tunneling region.
• Maximum reverse voltage.
• Forward voltage (resulting from current flow in the forward direction).
• Maximum permissible power dissipation.
• Terminal capacitance (measured at a specified reverse voltage and frequency).
• Junction operating temperature.
• Package type.

Tunnel Diode Manufacturers

The following table provides a comparison of tunnel diode manufacturers, their part numbers, and technical features:

Tunnel Diode Manufacturers	Description
M-Pulse Microwave Inc., San Jose, CA, USA	• Part Numbers: MP Series (e.g., MP1101, MP1201, MP1301, MP1451, MP1601) • Specifications of MP1601: Ip range (µA): 450 to 600, Iv (max. in µA): 225, Vr in mV (typ.) at Ir = 500 µA: 425, Vf in mV (max.) at If = 3 mA: 115, Ct (max.) in pF: 0.2 • Website: mpulsemw.com
MACOM	• Part number: MBD series (Aeroflex Metelics) • Features: Zero bias operation, excellent temperature stability, Low video impedance, etc. • Fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110°C. • MACOM acquired Aeroflex’s diode business from Cobham. • Website: https://www.macom.com/
American Microsemiconductor, Inc., New Jersey, USA	• Part number: 1N3712 (Peak point current, $I_p$ (mA): 1.0 +/- 10 %, Valley point current, $I_v$ (mA): 0.18, Capacitance, C (pF): 10, Peak Point Voltage, $V_p$ (mV): 65, Valley voltage, $V_v$ (mV): 350, Forward Peak voltage, $V_{fp}$ (mV): 500, Series resistance, $R_s$ (Ohms): 4.0, Negative conductance, -G: 8, Resist. cutoff frequency, $f_{RO}$: 2.3 • Other parts: TD series (ultra high speed switching tunnel diodes) • Email: rfq@americanmicrosemi.com • Website: https://www.americanmicrosemi.com/
Texas Instruments	• Part number: IN650 series • Manufactured using gallium arsenide material.
General Electric	• Part Number: 1N3712/TD-1

Summary

A tunnel diode is a high-speed semiconductor device that operates using quantum tunneling effects. Leading manufacturers provide tunnel diodes for microwave circuits, oscillators, and high-frequency RF applications.