schottky diode basics
This page describes schottky diode basics and schottky diode merits and its applications.
Schottky diode is one of the many microwave semiconductor devices in use today.
Figure-1 is the circuit symbol of the schottky diode. The diode is constructed on a thin silicon(n+ type) substrate by growing epitaxially on n-type active layer of about 2 micron thickness. A thin SiO2 layer is grown thermally over this active layer. Metal semiconductor junction is formed by depositing metal over SiO2.
Schottky diodes exhibit square law characteristics. They have high burnout ratings. They offer 1/f noise. They offer better reliability compare to point contact diodes. These are the advantages (merits or benefits) of schottky diode.
Schottky diode Applications
When the schottky diode is forward biased, the major carriers (i.e. electrons) can be easily injected from highly doped n-semiconductor
material into the metal.
When it is reverse biased, the barrier height becomes too high for the electrons to cross and no conduction will happen. These applications are very useful.
RF power flow in the device is limited by power dissipation in Rs. It is shorted across Cj, Cc and Ls. These will produce RF mismatch and can be matched by external circuit.
Varactor diode calculator
Refer varactor diode calculator page. This calculator calculates varactor diode capacitance, cut off frequency and quality factor.
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