tunnel diode vs p-n junction diode-difference between tunnel diode and p-n junction diode
This page compares tunnel diode vs p-n junction diode and mentions difference between tunnel diode and p-n junction diode. Both the diodes are used as low power devices.
| Tunnel diode | p-n diode |
|---|---|
| Low noise device | Moderate noise device |
| Preferred semiconductos used are Ge and GaAs | Preferred semiconductors used are Ge and Si |
| Tunnelling current consists of majority carriers(i.e. electrons from n-side to p-side) | Current consists of minority carriers (i.e. holes from p-side to n-side) |
| Doping levels at p and n sides are very high | Doping is normal in both p and n sides |
| At a small value of reverse voltage a large current flows due to large overlap between conduction band and valance band. It is useful as frequency converter. | leakage Current is extremely small upto certain reverse bias voltage. Increases abruptly to extreme high at breakdown voltage. |
| It has negative resistance characteristics. Hence it is useful for reflection amplifiers and oscillators. | It does not have negative resistance and hence used as detector and RF mixers. |
| majority carrier (current) responds much faster to voltage changes. This is suitable for microwave applications. | majority carrier (current) does not respond so fast to voltage changes. This is suitable for low frequency applications only. |
Refer Tunnel Diode Basics and Applications for more information. Also refer Zener Diode as voltage regulator and Ordinary Diode Tutorial.
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