GTO vs IGCT vs IGBT | difference between GTO,IGCT,IGBT

GTO vs IGCT vs IGBT | difference between GTO, IGCT, IGBT

This page compares GTO vs IGCT vs IGBT and mentions difference between GTO, IGCT and IGBT. GTO stands for Gate Turn-Off Thyristor, IGCT stands for Insulated Gate Commutated Thyristor and IGBT stands for Insulated Gate Bipolar Transistor. The comparison between the three devices are derived with respect to symbol, characteristic, advantages, disadvantages and applications.

GTO | Gate Turn-Off Thyristor

The figure-1 above depicts GTO construction and circuit symbol.

GTO base unit and its 2 transistor equivalent model

The figure-2 depicts GTO transistor base unit and its two transistor equivalent model.

The figure-3 depicts voltage and current waveforms when GTO structure is turned off.

IGCT | Insulated Gate Commutated Thyristor

The figure-4 depicts IGCT circuit symbol.

The figure-5 depicts IGCT structure.

Figure-6 depicts voltage and current waveforms when IGCT structure is turned off.

IGBT | Insulated Gate Bipolar Transistor

The full form of IGBT is Insulated Gate Bipolar Transistor. Figure-7 depicts 600 Volt G6H Trench IGBT structure and circuit symbol. Both the structures look same, but the main difference in IGBT p-substrate is added below the n-substrate.

Figure-8 mentions output characteristics of IGBT. Refer MOSFET vs IGBT>> to understand more on IGBT device.

Following table compares GTO vs IGCT vs IGBT and mentions difference between GTO, IGCT and IGBT.

Specifications	GTO	IGCT	IGBT
Full Form	Gate Turn-Off Thyristor	Insulated Gate Commutated Thyristor	Insulated Gate Commutated Thyristor
Advantages	• Controlled turn-off ability. • Relatively high overload capacity. • Series connection possibility. • Working frequency of hundreds of Hz.	• Controlled turn-off ability. • Relatively high overload capacity. • Low on-state losses. • Working frequency of kHz. • Series connection possibility. • High cyclic resistance.	• Controlled turn-off ability. • Minimum working frequency up to 10 kHz. • Very low control power.
Disadvantages	• Higher on-state losses. • High control power.		• Very high on-state losses. • Relatively low cyclic resistance.
Applications	• High power drives • Static compensators • Continuous supply sources • Induction heating sources	• High power drives • Supply inverter sources for DC transmissions • Big frequency converters	• Choppers • Continuous supply sources • Statical compensators and active filters • Switching sources

Following points summarize useful comparison between IGCT and IGBT:
➨IGBT has high switching frequency compare to IGCT.
➨IGBT lifetime is ten times greater than IGCT.
➨IGCT has low ON state voltage drop.
➨IGCT are made like normal disk devices which has high electro-magnetic emission. They also have cooling problems.