GaN vs LDMOS | Difference between GaN and LDMOS
This page compares GaN vs LDMOS and describes difference between GaN and LDMOS.
Parameter | GaN | LDMOS |
---|---|---|
Full form | Gallium Nitride | Laterally Diffused MOSFET |
Applications | • GaN on SiC (50V) provides high efficiency, power density and higher gain in smaller package • Used for broadband applications due to higher output impedance and lower Cds capacitance • Advantages: GaN transistors have small parasitic capacitance and hence they have easy wideband matching compare to LDMOS transistors of identical power level. |
• LDMOS is used for cellular and broadcast narrowband applications
due to high power and efficiency • LDMOS(50V) is used for <1.5 GHz applications while LDMOS (28V) is used for frequencies upto 4 GHz • Disadvantages: LDMOS transistor has large Cgs/Cds capacitance due to large peripheral in its design. This will limit the bandwidth. |
Fmax (GHz) | 30 GHz for GaN (50V) | 22 GHz for LDMOS (28V) 15 GHz for LDMOS (50V) |
Power Density (W/mm) | 5-10 for GaN (50V) | 0.8 for LDMOS (28V) 2 for LDMOS (50V) |
Efficiency at P1dB (%) | 70 for GaN (50V) | 60 for LDMOS (28V) <55 for LDMOS (50V) |
Bandwidth (MHz) | 500-2500 for GaN (50V) | 100-400 for LDMOS (28V) 100-500 for LDMOS (50V) |
Cds (pF/ W) output capacitance |
1/4 smaller for GaN (50V) | 0.23 for LDMOS (28V) 1/2 smaller for LDMOS (50V) |
Cgs (pF/ W) input capacitance |
1/2 smaller for GaN (50V) | 0.94 for LDMOS (28V) 1/2 smaller for LDMOS (50V) |
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