GaN vs GaAs-Difference between GaN and GaAs
The table-1 below compares GaN vs GaAs and describes difference between GaN and GaAs materials.
| Parameter | GaN | GaAs |
|---|---|---|
| Full form | Gallium Nitride | Gallium Arsenide |
| Power Density (Output) | 4 to 8 Wattt/mm | 0.5 to 1.5 Watt/mm |
| Operating Voltage | 28 to 48 Volt | 5 to 20 Volt |
| Breakdown voltage | > 100 Volt | 20 to 40 Volt |
| Current (Maximum) | About 1 Ampere/mm | About 0.5 Ampere/mm |
| Thermal Conductivity | 390 (z), 490 (SiC) | 47 |
| Radiation Resistant performance | Better | Lesser |
Following are the derivations from Table-1 above.
➨GaN has higher breakdown voltage as well as higher power densities in
comparison to GaAs and Si.
➨GaN is better in radiation resistant compare to GaAs and hence used in space applications.
➨GaN ideal for smaller devices due to high power densities due to reduction
capacitance value.
➨With GaN high impedances and wider bandwidths can be achieved.
➨GaN results into smaller size and lesser cost.
➨GaN based devices require less cooling and are light in weight.
GaN Power Amplifier vs GaAs Power Amplifier - Difference between GaN Power Amplifier and GaAs Power Amplifier
The table-2 below compares GaN Power Amplifier vs GaAs Power Amplifier mentions difference between GaN Power Amplifier and GaAs Power Amplifier.
| Parameter | GaN Power Amplifier | GaAs Power Amplifier |
|---|---|---|
| Spectral Regrowth for 400W SSPA Ku band frequency for operating power of 55 dBm | -30.3 dBc | -28.6 dBc |
| TOI (Third Order Intermodulation) with operating power of 52 dBm | -31.63 dBc | -27.50 dBc |
| AM/PM Conversion | 1.5o/dB (at 55dBm operating power), 0.5o/dB (at 52dBm operating power) | 2.5o/dB (at 55dBm operating power), 1.0o/dB (at 52dBm operating power) |
| Weight | 30KG | 80KG |
| Volume | 29 dm3 | 142 dm3 |
| Energy consumption | 2200 Watt | 3500 Watt |
Following are the derivations from Table-2 above. The results are derived from research conducted by Advantech Wireless Inc.
For more information one can reach Website www.advantechwireless.com.
➨GaN power amplifier(SSPA) perform better by 2dB compare to GaAs power amplifier(400W SSPA Ku band).
➨TOI performance of GaN is better by approx. 1 dB compare to GaAs SSPA of same specification.
➨AM/PM is better i.e. less distortion for GaN Power Amplifier compare to GaAs Power Amplifier.
➨Weight, Volume (i.e. size) and energy consumption of GaN power amplifier is far better compare to
GaAs power amplifier.
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