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Difference between Microwave semiconductor material-Si,GaAs,InP,GaN,AIN,InN

This page on Microwave semiconductor material compares properties of Si, GaAs, InP, GaN, AIN and InN. This tabular difference between Si,GaAs,InP,GaN,AIN and InN microwave semiconductor material is very useful.

Following table mentions major microwave semiconductor material properties of binary III-nitride compound. These are measured at temperature of 300K.


Material Properties GaAs Si InP GaN AIN InN
Structure Zinc Blende Diamond Cubic Zinc Blende Wurtzite Wurtzite Wurtzite
Lattice constant 5.653 5.431 5.869 a=3.18
c =5.18
a=3.11
c =4.97
a=3.54
c =5.71
Band Gap (eV) 1.42 1.12 1.35 3.44 6.2 0.7 to 1.0
Nature of bandgap direct indirect direct direct direct direct
refractive index 3.3 3.42 3.1 2.3 2.1 to 2.2 2.9 to 3.0
dielectric constant 12.9 11.7 12.6 10.4 8.5 15.3
Thermal conductivity
( W/cm-1 L-1 )
0.46 1.56 0.68 2.0 to 2.4 3.0 to 3.3 0.6 to 1.0
Electron Mobility
(cm2/V-s)
8000 1400 5400 2000 300 3200
Hole Mobility
(cm2/V-s)
400 500 200 400 14 -
Electron saturated
velocity
(107 cm/s)
0.7 2.3 3.9 2.5 1.9 3.4

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