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MOSFET fabrication technology | Fabrication of MOS devices

This page on MOSFET fabrication technology covers fabrication steps used in MOS devices such as MOSFET.

NMOS type MOSFET fabrication

SiO2 layer formation: An SiO2 layer is constructed to form on surface of the p-type Si-substrate by exposing top surface to the dry oxygen.

n+ layer diffusion: Two n+ layers are diffused into a p-region through two openings by using the photo-resist and UV ray technique.

Photoetching: The centre part Of SiO2 is removed by masking and photoetching method.

Re-oxidation: The total top surface of the final material is exposed to dry oxygen. Due to this, SiO2 layer is formed to completely cover the top surface.

Deposition: Phosphorous glass is deposited to cover the surface of SiO2.

Photoetching: By UV ray photoetching process, two windows are again opened on SiO2 layer above the n+ diffused regions.

Metallization: Entire Top surface of the device is metalized using Al material.

Masking and etching: By masking and photo-etching; Al metal contacts are retained to diffused gate, drain and source regions. The unwanted metal regions are etched away.

Figure above depicts fabrication process of NMOS type MOSFET.


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