HBT vs HEMT | difference between HBT and HEMT
This page compares HBT vs HEMT and describes difference between HBT and HEMT.
HBT-Heterojunction Bipolar Transistor
• Full Form: Heterojunction Bipolar Transistor
• Construction: It is BJT which utilizes diffusing semiconductor materials for Base and Emitter parts. This creates heterojunction. The figure-1 depicts internal HBT structure.
• HBTs are made using InP or InGaAs materials.
• HBT handles high frequency signals in several 100GHz range.
• Applications: Fast switching RF circuits, high power efficient devices such as PAs used in mobile phones. They are also used in monolithic optical ICs such as PIN based photo detector.
HEMT-High Electron Mobility Transistor
• Full form: High Electron Mobility Transistor
• Construction: The figure-2 depicts internal HEMT structure. It is a FET which incorporates junction between materials with different gaps i.e. heterojunction. It incorporates band gaps as channels instead of doped region which is done in MOSFET design.
• Materials: GaAs, AlGaAs, InGaAs
• Applications: Used at very high frequencies such as millimeter wave bands, ON-OFF digital switches, low power amplifiers, satellite receivers etc.
• Advantages: Higher Gain, Higher Switching Speed, Low Noise
Diode and Transistor Related Links
GUNN Diode➤ Varactor Diode➤ Tunnel Diode➤ PIN Diode➤ Impatt Diode vs Trapatt Diode vs Baritt Diode➤ Tunnel vs normal P-N➤ Schottky Diode➤ Zener Diode➤ N-Channel FET vs P-Channel FET➤ Depletion Vs Enhancement MOSFET➤
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