Home of RF and Wireless Vendors and Resources

One Stop For Your RF and Wireless Need

GTO vs IGCT vs IGBT | difference between GTO, IGCT, IGBT

This page compares GTO vs IGCT vs IGBT and mentions difference between GTO, IGCT and IGBT. GTO stands for Gate Turn-Off Thyristor, IGCT stands for Insulated Gate Commutated Thyristor and IGBT stands for Insulated Gate Bipolar Transistor. The comparison between the three devices are derived with respect to symbol, characteristic, advantages, disadvantages and applications.

GTO | Gate Turn-Off Thyristor

GTO construction and symbol

The figure-1 above depicts GTO construction and circuit symbol.

GTO base unit and its 2 transistor equivalent model

The figure-2 depicts GTO transistor base unit and its two transistor equivalent model.

GTO characteristic

The figure-3 depicts voltage and current waveforms when GTO structure is turned off.

IGCT | Insulated Gate Commutated Thyristor

IGCT symbol

The figure-4 depicts IGCT circuit symbol.

IGCT structure

The figure-5 depicts IGCT structure.

IGCT characteristic

Figure-6 depicts voltage and current waveforms when IGCT structure is turned off.

IGBT | Insulated Gate Bipolar Transistor

IGBT structure and symbol

The full form of IGBT is Insulated Gate Bipolar Transistor. Figure-7 depicts 600 Volt G6H Trench IGBT structure and circuit symbol. Both the structures look same, but the main difference in IGBT p-substrate is added below the n-substrate.

IGBT characteristic

Figure-8 mentions output characteristics of IGBT. Refer MOSFET vs IGBT>> to understand more on IGBT device.

Following table compares GTO vs IGCT vs IGBT and mentions difference between GTO, IGCT and IGBT.


Specifications GTO IGCT IGBT
Full Form Gate Turn-Off Thyristor Insulated Gate Commutated Thyristor Insulated Gate Commutated Thyristor
Advantages • Controlled turn-off ability.
• Relatively high overload capacity.
• Series connection possibility.
• Working frequency of hundreds of Hz.
• Controlled turn-off ability.
• Relatively high overload capacity.
• Low on-state losses.
• Working frequency of kHz.
• Series connection possibility.
• High cyclic resistance.
• Controlled turn-off ability.
• Minimum working frequency up to 10 kHz.
• Very low control power.
Disadvantages • Higher on-state losses.
• High control power.
• Very high on-state losses.
• Relatively low cyclic resistance.
Applications • High power drives
• Static compensators
• Continuous supply sources
• Induction heating sources
• High power drives
• Supply inverter sources for DC transmissions
• Big frequency converters
• Choppers
• Continuous supply sources
• Statical compensators and active filters
• Switching sources

Following points summarize useful comparison between IGCT and IGBT:
➨IGBT has high switching frequency compare to IGCT.
➨IGBT lifetime is ten times greater than IGCT.
➨IGCT has low ON state voltage drop.
➨IGCT are made like normal disk devices which has high electro-magnetic emission. They also have cooling problems.

MOSFET and BJT related links

MOSFET vs IGBT➤
PNP Transistor Vs NPN Transistor➤
BJT vs FET➤
JUGFET vs MOSFET➤
Depletion MOSFET vs Enhancement MOSFET➤
MOSFET Fabrication Technology➤
MOSFET vs BJT-Difference between MOSFET and BJT➤
Application Note-MOSFET as switch and amplifier➤
Difference between NMOS vs PMOS➤

What is Difference between

difference between FDM and OFDM
Difference between SC-FDMA and OFDM
Difference between SISO and MIMO
Difference between TDD and FDD
Difference between 802.11 standards viz.11-a,11-b,11-g and 11-n
OFDM vs OFDMA
CDMA vs GSM

RF and Wireless Terminologies


Share this page

Translate this page