Advantages of Indium phosphide(InP) | disadvantages of Indium phosphide(InP)
This page covers advantages and disadvantages of Indium phosphide (InP). It mentions Indium phosphide (InP) advantages or benefits and Indium phosphide (InP) disadvantages or drawbacks.
What is Indium phosphide (InP)?
• It is a binary semiconductor which is composed of indium and phosphorus.
• It is face-centered cubic crystal structure as shown in the figure-1.
• It is identical to GaAs and other III-V semiconductors
• Indium phosphide preparation is carried out at 400oC with reaction of white phosphorus and indium iodide.
• InP is used in high frequency electronics at high power.
• It can be used along with InGaAs to develop pseudomorphic HBT which can be used upto frequencies of 604 GHz.
• It can be used in manufacturing of opto-electronic devices and photonic ICs in telecommunication systems.
Following are the properties of Indium phosphide (InP) :
• Band gap: 1.34 eV
• Structure : Zinc blende
• Electron mobility: 5400 cm2/(V*s) at 300 K
• Thermal conductivity: 0.7 W/(cm*K) at 300 K
• Refractive index (nD): 3.1 (infrared);
Benefits or advantages of Indium phosphide (InP)
Following are the benefits or advantages of Indium phosphide (InP):
➨It has superior electron velocity compare to silicon (Si) and gallium arsenide (GaAs). This is about 5 times higher.
➨It has direct band gap.
➨20 times lower base sheet resistance.
➨5 times higher base electron diffusivity.
➨4 times higher breakdown at same fΤ
Drawbacks or disadvantages of Indium phosphide (InP)
Following are the drawbacks or disadvantages of Indium phosphide (InP):
➨Presently only scaled to ~1 µm (in production).
➨Large emitters and poor emitter contact.
➨Low current density (about 2 mA/µm2)
➨High collector capacitance
➨Non-planar device with low yield.
➨Low integration scales.